Good detection efficiency and high energy-resolution make Cadmium Zinc Telluride (CdZnTe) and Cad- mium Telluride (CdTe) detectors attractive in many room temperature X-ray and gamma-ray detection applications such as medical and industrial imaging, industrial gauging and non-destructive testing, secu- rity and monitoring, nuclear safeguards and non-proliferation, and astrophysics. Advancement of the crys- tal growth and device fabrication technologies and the reduction of bulk, interface and surface defects in the devices are crucial for the widespread practical deployment of Cd1–xZnxTe-based detector technology. Here we review the effects of bulk, interface and surface defects on charge transport, charge transport uni- formity and device performance and the progress in the crystal growth and device fabrication technologies aiming at reducing the concentration of harmful defects and improving Cd1–xZnxTe detector performance.
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