In this paper, we report on the design, fabrication, and performance of the first CdZnTe Schottky photodiode arrays for radiation detection. High pressure Bridgman-grown CdZnTe substrates with bulk resistivities in the range 108 to 1010ohm-cm were used. CdZnTe Schottky photodiodes were formed with In and Ti/Au contacts. Diode arrays with pixel sizes from 1000 � 1000 ?m to 100 � 100 ?m were fabricated. The diode's I-V characteristics exhibited low leakage current and high bulk resistivity; leakage current decreased as diode pixel size was reduced. Response of these detector arrays to high energy photons was uniform and their energy resolution improved with smaller pixel size.
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