Chemical and physical treatments of chemical mechanical polishing wastewater from semiconductor fabrication

  • Lin S
  • Yang C
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Abstract

Wastewater from chemical mechanical polishing (CMP) process of semiconductor fabrication was treated by physical methods. The CMP wastewater, as obtained from a large semiconductor manufacturer, was characterized by a high oxide particle content, high turbidity (NTU), and a chemical oxygen demand (COD) concentration up to 500mg/l. Due to these characteristics, treatment of the CMP wastewater by either filtration or by traditional activated sludge method was inadequate. In the present work, physical methods consisting of chemical coagulation and reverse osmosis were employed to tackle the turbidity and COD problems. Experimental tests were conducted to assess the effectiveness of the treatment and to identify the optimum operating conditions. Test results clearly demonstrated the complementary advantages of the two methods. The treatment was capable of realizing over 99% oxide particle removal and lowering the wastewater COD to below 100mg/l. The overall water quality of the final effluent was excellent and can be considered for reuse. Preliminary treatment of the RO retentate by ozonation was also attempted. The COD removal achieved in the ozonation was over 80% in an hour, rendering the treated RO retentate suitable for direct discharge. © 2004 Elsevier B.V. All rights reserved.

Author-supplied keywords

  • Chemical coagulation
  • Chemical mechanical polishing wastewater
  • Retentate treatment
  • Reverse osmosis
  • Semiconductor fabrication

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Authors

  • Sheng H. Lin

  • Chung R. Yang

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