Chemical vapor deposition growth of large-scale hexagonal boron nitride with controllable orientation

  • Song X
  • Gao J
  • Nie Y
 et al. 
  • 74

    Readers

    Mendeley users who have this article in their library.
  • 41

    Citations

    Citations of this article.

Abstract

Chemical vapor deposition (CVD) synthesis of large-domain hexagonal boron nitride (h-BN) with a uniform thickness is very challenging, mainly due to the extremely high nucleation density of this material. Herein, we report the successful growth of wafer-scale, high-quality h-BN monolayer films that have large single-crystalline domain sizes, up to ~72 µm in edge length, prepared using a folded Cu-foil enclosure. The highly confined growth space and the smooth Cu surface inside the enclosure effectively reduced the precursor feeding rate together and induced a drastic decrease in the nucleation density. The orientation of the as-grown h-BN monolayer was found to be strongly correlated to the crystallographic orientation of the Cu substrate: the Cu (111) face being the best substrate for growing aligned h-BN domains and even single-crystalline monolayers. This is consistent with our density functional theory calculations. The present study offers a practical pathway for growing high-quality h-BN films by deepening our fundamental understanding of the process of their growth by CVD

Author-supplied keywords

  • Cu foil
  • chemical vapor deposition (CVD)
  • domain size
  • hexagonal boron nitride
  • orientation

Get free article suggestions today

Mendeley saves you time finding and organizing research

Sign up here
Already have an account ?Sign in

Find this document

Authors

  • Xiuju Song

  • Junfeng Gao

  • Yufeng Nie

  • Teng Gao

  • Jingyu Sun

  • Donglin Ma

Cite this document

Choose a citation style from the tabs below

Save time finding and organizing research with Mendeley

Sign up for free