Coherent phonon study of (GeTe)l(Sb2Te3)m interfacial phase change memory materials

  • Makino K
  • Saito Y
  • Fons P
 et al. 
  • 17


    Mendeley users who have this article in their library.
  • N/A


    Citations of this article.


The time-resolved reflectivity measurements were carried out on the interfacial phase change memory (iPCM) materials ([(GeTe)$_{2}$(Sb$_{2}$Te$_{3}$)$_{4}$]$_{8}$ and [(GeTe)$_{2}$(Sb$_{2}$Te$_{3}$)$_{1}$]$_{20}$) as well as conventional Ge$_{2}$Sb$_{2}$Te$_{5}$ alloy at room temperature and above the RESET-SET phase transition temperature. In the high-temperature phase, coherent phonons were clearly observed in the iPCM samples while drastic attenuation of coherent phonons was induced in the alloy. This difference strongly suggests the atomic rearrangement during the phase transition in iPCMs is much smaller than that in the alloy. These results are consistent with the unique phase transition model in which a quasi-one-dimensional displacement of Ge atoms occurs for iPCMs and a conventional amorphous-crystalline phase transition takes place for the alloy.

Get free article suggestions today

Mendeley saves you time finding and organizing research

Sign up here
Already have an account ?Sign in

Find this document


  • Kotaro Makino

  • Yuta Saito

  • Paul Fons

  • Alexander V. Kolobov

  • Takashi Nakano

  • Junji Tominaga

Cite this document

Choose a citation style from the tabs below

Save time finding and organizing research with Mendeley

Sign up for free