Comparison Between E-beam and Ultraviolet Curing to Perform Porous a-SiOC:H

  • Jousseaume V
  • Zenasni A
  • Favennec L
 et al. 
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Porous ultralow-k films are required by the microelectronics industry as interlayer dielecs. for 65 nm technologies and below. These porous insulating films can be deposited by plasma-enhanced CVD using a porogen approach. It consists of the codeposition of a matrix precursor and a sacrificial org. porogen, and then on a post-treatment to remove the org. porogen phase and create porosity in the film. An e-beam assisted thermal curing was compared to an UV-assisted thermal curing. Basic film properties such as k, film shrinkage, porosity, pore size, and pore size distribution were evaluated. NMR and FTIR analyses were used to study the chem. modifications induced by the post-treatment. These analyses show that the post-treatment impact depends on the radiation used. Both treatments lead to a removal of terminal nonbridging bonds such as Si-OH, Si-H, and Si-CH3 and can contribute to a subsequent formation of Si-O-Si crosslinks. Both treatments remove methyls from Si-CH3, but the e-beam induces a Si-H bond increase while the UV bulb used decreases the Si-H contribution. The crosslinking improvement induces an increase of Young's modulus, the elastic properties being mainly correlated to the Si-O-Si volumic bond concn. in the film. [on SciFinder(R)]

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  • V. Jousseaume

  • A. Zenasni

  • L. Favennec

  • G. Gerbaud

  • M. Bardet

  • J. P. Simon

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