Complex band structure and the band alignment problem at the Si high-k dielectric interface

  • Demkov A
  • Fonseca L
  • Verret E
 et al. 
  • 56


    Mendeley users who have this article in their library.
  • 70


    Citations of this article.


We investigate the use of the complex band structure of high-k gate dielectrics to estimate their charge neutrality levels, and compute band offsets to Si. A comparison is made with the available results obtained with direct electronic sturcture methods and experiment. It appears that charge neutrality levels thus obtained indeed provide a consistent picture for simple interfaces. However, the uncertainty in the conduction band position inherent in the local density approximation may render the theory inadequate for engineering support. Despite this limitation, linear rescaling of the charge neutrality levels based on the experimental band gaps for six oxides (SiO2, Al2O3, c-HfO2, m-HfO2, La2O3, and SrTiO3) hase shown excellent agreement with experimental data.

Get free article suggestions today

Mendeley saves you time finding and organizing research

Sign up here
Already have an account ?Sign in

Find this document


Cite this document

Choose a citation style from the tabs below

Save time finding and organizing research with Mendeley

Sign up for free