Controlled bipolar doping in Cu3N (100) thin films

  • Matsuzaki K
  • Okazaki T
  • Lee Y
 et al. 
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Abstract

We have fabricated insulating, p- and n-type Cu 3N(100) films on SrTiO3(100) by plasma assisted molecular beam epitaxy. By controlling the Cu/N flux rate, p-type doping with 1018–1020 cm−3 in Cu-poor condition and n-type doping with 1019–1020 cm−3 in N-poor condition were obtained without introducing foreign species. Together with formation of insulating Cu 3N films with an optical absorption coefficient of ∼105 cm−1 in the photon energy above ∼2.2 eV and an estimated indirect bandgap of ∼1.3 eV, the bipolar doping in Cu 3N films would be promising for solar energy conversion applications.

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Authors

  • Kosuke Matsuzaki

  • Tetsushi Okazaki

  • Yih Shu Lee

  • Hideo Hosono

  • Tomofumi Susaki

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