Controlled growth of large-area high-performance small-molecule organic single-crystalline transistors by slot-die coating using a mixed solvent system

  • Chang J
  • Chi C
  • Zhang J
 et al. 
  • 70


    Mendeley users who have this article in their library.
  • 64


    Citations of this article.


A slot-die coating technique is used for the crystal alignment of triisopropylsilylethynyl (TIPS)-pentacene in solution-processed field-effect transistors (FETs). The film thickness, uniformity, and crystal growth behavior are well controlled by tuning the coating parameters and by using a mixed solvent system (toluene/anisole). An average saturation regime FET mobility of 1.8 cm(2) V(-1) s(-1) is achieved under ambient conditions.

Author-supplied keywords

  • crystal anisotropy
  • mixed solvent systems
  • organic single-crystalline transistors
  • slot-die coating

Get free article suggestions today

Mendeley saves you time finding and organizing research

Sign up here
Already have an account ?Sign in

Find this document


Cite this document

Choose a citation style from the tabs below

Save time finding and organizing research with Mendeley

Sign up for free