A slot-die coating technique is used for the crystal alignment of triisopropylsilylethynyl (TIPS)-pentacene in solution-processed field-effect transistors (FETs). The film thickness, uniformity, and crystal growth behavior are well controlled by tuning the coating parameters and by using a mixed solvent system (toluene/anisole). An average saturation regime FET mobility of 1.8 cm2 V-1 s-1 is achieved under ambient conditions. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
CITATION STYLE
Chang, J., Chi, C., Zhang, J., & Wu, J. (2013). Controlled growth of large-area high-performance small-molecule organic single-crystalline transistors by slot-die coating using a mixed solvent system. Advanced Materials, 25(44), 6442–6447. https://doi.org/10.1002/adma.201301267
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