Crystallization behavior of thin ALD-Al2O3 films

Abstract

Integration of materials with a high dielectric constant into storage or gate capacitor applications requires a detailed understanding of the crystallization behavior. The dependence of crystallinity on annealing temperature and time was studied for thin atomic-layer-deposited (ALD) Al2O3 films of varying thickness, using grazing-incidence X-ray diffraction. The correlation between dielectric constant and annealing condition was investigated and an increase in dielectric constant due to annealing was observed. © 2002 Elsevier Science B.V. All rights reserved.