DC Performance of High-Quantum-Efficiency 1 . 3- μ m GaNAsSb / GaAs Waveguide Photodetector

  • Xu Z
  • Saadsaoud N
  • Zegaoui M
 et al. 
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We present the dc performance of a high-quantumefficiency GaNAsSb/GaAs p-i-n waveguide photodetector. GaNAsSb with N and Sb contents of 3.3% and 8%, respectively, is sandwiched by AlGaAs/GaAs cladding layers. Two types of device epilayer structures, i.e., with and without AlGaAs cladding layer, show high responsivity values of 0.72 and 0.55 A/W, respectively, at a reverse bias voltage of 10 V and a wavelength of 1.3 μm. These correspond to internal quantum efficiencies of 96.7% and 73.9%, respectively. A linear increase in photocurrent with an increase in optical power up to 8 mW and also a high reverse breakdown voltage of −16.6 V were obtained.

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  • Z. Xu

  • N. Saadsaoud

  • M. Zegaoui

  • W. K. Loke

  • K. H. Tan

  • S. Wicaksono

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