Defect states in the high-dielectric-constant gate oxide LaAlO[sub 3]

  • Xiong K
  • Robertson J
  • Clark S
  • 14

    Readers

    Mendeley users who have this article in their library.
  • N/A

    Citations

    Citations of this article.

Abstract

We present calculations of the energy levels of the oxygen vacancy,AlLa antisite, and oxygen interstitial defects in LaAlO3 using density functional methods that do not need an empirical band gap correction. The levels are aligned to those of the Si channel using the known band offsets. The oxygen vacancy gives an energy level near the LaAlO3conduction band and above the Si gap. It is identified as the main electron trap and the cause of instability. The AlLa antisite gives a state near midgap, neutral when empty, which would be an important trap, with no counterpart in HfO2.

Get free article suggestions today

Mendeley saves you time finding and organizing research

Sign up here
Already have an account ?Sign in

Find this document

Authors

  • K. Xiong

  • J. Robertson

  • S. J. Clark

Cite this document

Choose a citation style from the tabs below

Save time finding and organizing research with Mendeley

Sign up for free