Cetyltrimethyl ammonium bromide (CTAB) templated mesoporous indium tin oxide (ITO) thin films were deposited on quartz plates by an evaporation-induced self-assembly (EISA) process using a dip coating method. The starting solution was prepared by mixing indium chloride, tin chloride, and CTAB dissolved in ethanol. Five to fifty mole percent Sn-doped ITO films were prepared by heat-treatment at 400 C for 5 h. The structural, adsorptive, electrical, and optical properties of mesoporous ITO thin films were investigated. Results indicate that the mesoporous ITO thin films have an ordered two-dimensional hexagonal (p6mm) structure, with nanocrystalline domains in the inorganic oxide framework. The continuous thin films have highly ordered pore sizes (>20 high Brunauer-Emmett-Teller (BET) surface area up to 340 m2/g, large pore volume (>0.21 cm3/g), outstanding transparency in the visible range (>80%), and show a minimum resistivity of = 1.2 10-2 cm. 2007 Elsevier Ltd. All rights reserved.
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