Deposition of transparent conductive mesoporous indium tin oxide thin films by a dip coating process

  • Zhang X
  • Wu W
  • Tian T
 et al. 
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Abstract

Cetyltrimethyl ammonium bromide (CTAB) templated mesoporous indium tin oxide (ITO) thin films were deposited on quartz plates by an evaporation-induced self-assembly (EISA) process using a dip coating method. The starting solution was prepared by mixing indium chloride, tin chloride, and CTAB dissolved in ethanol. Five to fifty mole percent Sn-doped ITO films were prepared by heat-treatment at 400 C for 5 h. The structural, adsorptive, electrical, and optical properties of mesoporous ITO thin films were investigated. Results indicate that the mesoporous ITO thin films have an ordered two-dimensional hexagonal (p6mm) structure, with nanocrystalline domains in the inorganic oxide framework. The continuous thin films have highly ordered pore sizes (>20 high Brunauer-Emmett-Teller (BET) surface area up to 340 m2/g, large pore volume (>0.21 cm3/g), outstanding transparency in the visible range (>80%), and show a minimum resistivity of = 1.2 10-2 cm. 2007 Elsevier Ltd. All rights reserved.

Author-supplied keywords

  • a
  • b
  • c
  • d
  • gel chemistry
  • optical properties
  • semiconductivity
  • sol
  • thin films
  • x ray diffraction

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Authors

  • X Zhang

  • W Wu

  • T Tian

  • Y Man

  • J Wang

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