The paper presents the results of a systematic analytical characterization, supplemented by 2D device simulation, applied to novel device architecture: hetero-material double-gate (HEM-DG) MOSFET with effective channel length down to 30 nm. A new approach to explain the pertinent device physics is presented, which can facilitate device design and technology selection for enhanced performance. Numerical device simulation data, obtained using 2D device simulator: ATLAS, for threshold voltage, drain induced barrier lowering (DIBL) and subthreshold swing (S) were compared to the model to validate the analytical formulation. The comparison of symmetric DG (SDG) MOSFET and HEM-DG MOSFET configurations demonstrated superiority of HEM-DG MOSFET: ideal S and reduced DIBL. Comparison with simulated results reveals excellent quantitative agreement. © 2004 Elsevier Ltd. All rights reserved.
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