Determination of piezoelectric fields in strained GaInN quantum wells using the quantum-confined Stark effect

  • Takeuchi T
  • Wetzel C
  • Yamaguchi S
 et al. 
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Abstract

We have identified piezoelectric fields in strained GaInN/GaN quantum well p-i-n structures using the quantum-confined Stark effect. The photoluminescence peak of the quantum wells showed a blueshift with increasing applied reverse voltages. This blueshift is due to the cancellation of the piezoelectric field by the reverse bias field. We determined that the piezoelectric field points from the growth surface to the substrate and its magnitude is 1.2 MV/cm for Ga0.84In0.16N/GaN quantum wells on sapphire substrate. In addition, from the direction of the field, the growth orientation of our nitride epilayers can be determined to be (0001), corresponding to the Ga face. © 1998 American Institute of Physics. © 1998 American Institute of Physics

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Authors

  • Hiroshi Amano名古屋大学

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  • Tetsuya Takeuchi

  • Christian Wetzel

  • Shigeo Yamaguchi

  • Hiromitsu Sakai

  • Isamu Akasaki

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