Device scaling physics and channel velocities in AIGaN/GaN HFETs: Velocities and effective gate length

  • Wu Y
  • Singh M
  • Singh J
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Abstract

This paper addresses scaling issues in AIGaN/GaN heterojunction field-effect transistors (HFETs) using ensemble Monte Carlo techniques. For gate lengths below 0.25 μm, fT values are known not to scale linearly with the inverse gate length. The authors' simulations show this to be due to an increasing difference between the lithographic gate length and the effective gate length as the devices shrink. The results for AIGaN/GaN are compared with In0.52Al0.48-In0.53Ga0.47As-InP devices, and the authors found that the limiting role of velocity overshoot and depletion region spread causes the GaN HFETs to have a peak fT of ∼ 220 GHz compared to ∼ 500 GHz for InGaAs devices.

Author-supplied keywords

  • AlGaN
  • Effective gate length
  • GaN
  • Heterojunction field-effect transistors (HFETs)
  • III-V nitrides
  • InGaAs
  • InP
  • Recessed gate
  • Scaling

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Authors

  • Yuh Renn Wu

  • Madhusudan Singh

  • Jasprit Singh

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