A simple and effective means for passivating crystalline silicon is reported by the use of free-radical polymerization (FRP) to directly graft polymer chains to a hydride-terminated surface (Si-H). Complete surface coverage and passivation was achieved in approximately 24 h at 60 °C or 30 min at 90 °C. Mechanistic studies determined that chain attachment followed a hydride-transfer-based grafting-to mechanism. The grafting process is compatible with a variety of monomers and was used to assemble polymer brush layers (2-12 nm thick), with grafting densities ranging from 0.02 to 0.65 chains/nm 2 rivaling densities typically obtained by grafting-from scenarios. This new passivation route provides a uniquely accessible means to covalently anchor dense polymer brushes to silicon surfaces without the need for functionalization of the polymer chain ends or the substrate. © 2009 American Chemical Society.
CITATION STYLE
Moran, I. W., & Carter, K. R. (2009). Direct passivation of hydride-terminated silicon (100) surfaces by free-radically tethered polymer brushes. Langmuir, 25(16), 9232–9239. https://doi.org/10.1021/la900795d
Mendeley helps you to discover research relevant for your work.