Discharge of MNOS structures

  • Lundkvist L
  • Lundström I
  • Svensson C
  • 11

    Readers

    Mendeley users who have this article in their library.
  • 131

    Citations

    Citations of this article.

Abstract

The discharge of MNOS memory devices at zero or low gate voltages is studied theoretically and experimentally. A theory based on direct tunneling of charge carriers from traps in the silicon nitride layer into the silicon describes the experiments quite well. The discharge process is found to be logarithmic in time, starting at a certain time, iftd, which is exponentially dependent on the oxide thickness, and ending at another time, extrapolated to much larger than 10 years. Some implications of the discharge model are discussed. © 1973.

Get free article suggestions today

Mendeley saves you time finding and organizing research

Sign up here
Already have an account ?Sign in

Find this document

Authors

  • L. Lundkvist

  • I. Lundström

  • C. Svensson

Cite this document

Choose a citation style from the tabs below

Save time finding and organizing research with Mendeley

Sign up for free