Dislocation movement in GaN films

  • Moram M
  • Sadler T
  • Häberlen M
 et al. 
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We demonstrate that significant dislocation movement occurs below the surface of heteroepitaxial c-plane {GaN} films during their growth by metalorganic vapor phase epitaxy. Dislocations move primarily by vacancy-assisted climb, which appears to be driven by the high in-plane biaxial stresses present during growth. Annealing low dislocation density (4.3×108 cm−2) {GaN} films promotes dislocation climb and thus reduces both dislocation densities and in-plane stresses (at high temperatures), independent of epilayer growth conditions.

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  • M. A. Moram

  • T. C. Sadler

  • M. Häberlen

  • M. J. Kappers

  • C. J. Humphreys

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