Double-scaled potential profile in a group-III nitride alloy revealed by Monte Carlo simulation of exciton hopping

  • Kazlauskas K
  • Tamulaitis G
  • Žukauskas A
 et al. 
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Abstract

The temperature dependences of the peak position and width of the photoluminescence band in Al 0.1 In 0.01 Ga 0.89 N layers were explained by Monte Carlo simulation of exciton localization and hopping. The introduction of a doubled-scaled potential profile due to inhomogeneous distribution of indium allowed obtaining a good quantitative fit of the experimental data. Hopping of excitons was assumed to occur through localized states distributed on a 16 meV energy scale within the In-rich clusters with the average energy in these clusters dispersed on a larger (42 meV) scale.

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Authors

  • Michael ShurRensselaer Polytechnic Institute

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  • K. Kazlauskas

  • G. Tamulaitis

  • A. Žukauskas

  • M. A. Khan

  • J. W. Yang

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