© 2016 American Chemical Society. Deposition of high-k dielectrics on two-dimensional MoS 2 is an important process for successful application of the transition-metal dichalcogenides in electronic devices. Here, we show the effect of H 2 O reactant exposure on monolayer (1L) MoS 2 during atomic layer deposition (ALD) of Al 2 O 3 . The results showed that the ALD-Al 2 O 3 caused degradation of the performance of 1L MoS 2 field effect transistors (FETs) owing to the formation of Mo-O bonding and trapping of H 2 O molecules at the Al 2 O 3 /MoS 2 interface. Furthermore, we demonstrated that reduced duration of exposure to H 2 O reactant and postdeposition annealing were essential to the enhancement of the performance of top-gated 1L MoS 2 FETs. The mobility and on/off current ratios were increased by factors of approximately 40 and 10 3 , respectively, with reduced duration of exposure to H 2 O reactant and with postdeposition annealing.
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