Effect of passivation layer on InGaZnO thin-film transistors with hybrid silver nanowires as source and drain electrodes

  • Yu C
  • Wu H
  • Chien C
  • 10


    Mendeley users who have this article in their library.
  • 1


    Citations of this article.


InGaZnO (IGZO) thin-film transistors (TFTs) with hybrid silver nanowires (hybrid-AgNWs) as the source and drain electrodes exhibit superior performance according to the on/off current ratio (≈106), subthreshold swing (SS) (367 mV/decade), and mobility (15.6 cm2 V−1 s−1). The transfer and output characteristics of nanowire-based electrodes are comparable with those of titanium electrodes. The devices are fabricated on a plastic substrate and are highly transparent (>70%) and flexible. The device performance is severely degraded during operation in air, especially under high humidity conditions, and progressive deterioration resulting from water molecule diffusion leads to a high current density when the device is swept. Hence, introducing a passivation layer on the hybrid-AgNW electrodes is imperative.

Get free article suggestions today

Mendeley saves you time finding and organizing research

Sign up here
Already have an account ?Sign in

Find this document

Get full text


  • Chien Hsien Yu

  • Hung Chi Wu

  • Chao Hsin Chien

Cite this document

Choose a citation style from the tabs below

Save time finding and organizing research with Mendeley

Sign up for free