Effect of Sb induced type II alignment on dynamical processes in InAs/GaAs/GaAsSb quantum dots: Implication to solar cell design

  • Tomić S
  • 20


    Mendeley users who have this article in their library.
  • 24


    Citations of this article.


In order to improve the dynamical conditions for possible formation of quasi-Fermi level separation between states in the conduction band, upon external illumination of an quantum dot based solar cells, we employ methods of quantum engineering to design the type II alignment, using a GaAsSb barrier buffer underneath InAs/GaAs QD. By changing the Sb amount in the buffer region, we predict an increase of the interband radiative time to the same time scale as interband radiative time, with simultaneous increase of the Auger electron cooling to ∼ 0.1 ns. © 2013 AIP Publishing LLC

Get free article suggestions today

Mendeley saves you time finding and organizing research

Sign up here
Already have an account ?Sign in

Find this document

Cite this document

Choose a citation style from the tabs below

Save time finding and organizing research with Mendeley

Sign up for free