Effects of crystallographic orientation on the oxygen exchange rate of La0.7Sr0.3MnO3 thin films

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Abstract

The oxygen surface exchange of La0.7Sr0.3MnO 3 (LSM) thin films was investigated using the electrical conductivity relaxation (ECR) method. Epitaxial (100)-, (110)-, and (111)-oriented LSM films were fabricated on corresponding SrTiO3 (STO) substrates using pulsed laser deposition. The LSM films had well-controlled surface qualities, exhibited bulk-like steady-state electrical properties, and exhibited surface dominated responses in ECR. The chemical surface exchange coefficients (k chem) were determined and varied from ≈ 1 × 10- 6 to 65 × 10- 6 cm/s, depending on temperature and orientation, with activation energies of between 0.8 and 1.2 eV. At 800 °C, a four fold variation is observed in the kchem values, with (110)/(100) being the highest/lowest, explained well by the high activation energy for (110), ≈ 1.16 eV, and the low energy for (111) and (100), ≈0.83 eV. © 2011 Elsevier B.V. All rights reserved.

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Yan, L., Balasubramaniam, K. R., Wang, S., Du, H., & Salvador, P. A. (2011). Effects of crystallographic orientation on the oxygen exchange rate of La0.7Sr0.3MnO3 thin films. Solid State Ionics, 194(1), 9–16. https://doi.org/10.1016/j.ssi.2011.05.004

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