Effects of internal electrical field on transient absorption in InxGa1−xN thin layers and quantum wells with different thickness by pump and probe spectroscopy

  • Omae K
  • Kawakami Y
  • Fujita S
 et al. 
  • 18

    Readers

    Mendeley users who have this article in their library.
  • 16

    Citations

    Citations of this article.

Abstract

The well width dependence of internal electric field effects was investigated using nondegenerate pump and probe spectroscopy at low and room temperature in four types of InGaN-based semiconductors of active layer thicknesses (a) 30 nm (single layer), (b) 10 nm (3 periods), (c) 5 nm (6 periods), and (d) 3 nm (10 periods). For sample (a) and (b) photoinduced absorption was observed due to screening of the internal electric field at low and room temperature. We observed two competing effects, exciton localization and the internal electric field, in sample (c) at low temperature. For sample (d) only photobleaching was observed due to occupation at the localized states. The results show that the field screening effects are more important for increasing well width after carrier generation. Furthermore, the carrier density to observe the photoinduced absorption due to screening the internal electric field is much less than the carrier density for stimulated emission at room temperature.

Get free article suggestions today

Mendeley saves you time finding and organizing research

Sign up here
Already have an account ?Sign in

Find this document

Authors

  • Kunimichi Omae

  • Yoichi Kawakami

  • Shigeo Fujita

  • Yukio Narukawa

  • Takashi Mukai

Cite this document

Choose a citation style from the tabs below

Save time finding and organizing research with Mendeley

Sign up for free