The dissolution behavior of silicon under high anodic polarization in buffered electrolyte with low fluoride content (≤ 0.1 mol dm-3) has been studied to determine an appropriate etching condition for the depth profiling of silicon structures. It is shown, that the dependence of the effective dissolution valence of silicon upon the semiconductor properties can be minimized by the rigorous choice of the electrolyte composition, pH and dissolution potential. © 1993.
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