Electron hall mobility in GaAsBi

  • Kini R
  • Bhusal L
  • Ptak A
 et al. 
  • 56


    Mendeley users who have this article in their library.
  • 68


    Citations of this article.


We present measurements of the electron Hall mobility in n-type GaAs1−xBix epilayers. We observed no significant degradation in the electron mobility with Bi incorporation in GaAs, up to a concentration of 1.2%. At higher Bi concentration ( ≥ 1.6%) some degradation of the electron mobility was observed, although there is no apparent trend. Temperature dependent Hall measurements of the electron mobility suggest neutral impurity scattering to be the dominant scattering mechanism.

Get free article suggestions today

Mendeley saves you time finding and organizing research

Sign up here
Already have an account ?Sign in

Find this document


Cite this document

Choose a citation style from the tabs below

Save time finding and organizing research with Mendeley

Sign up for free