Electron tunneling from channel to gate

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Electron tunneling from channel to gate Peter J. Price IBM T. J. Watson Research Center, Yorktown Heights, New York 10598 (Received 22 November 2002; accepted 5 February 2003) A general treatment based on the Gamow formulation of tunneling escape through an enclosing barrier is developed for analysis of the escape of electrons from the conducting channel of a field effect transistor through the barrier layer into the gate. The result gives the tunneling rate calculated from computed wave functions of the quantum levels, without requiring these to correspond to quasiclassical motion in the channel region, but rather for the general case including the ground state. ©2003 American Institute of Physics. doi:10.1063/1.1564633 PACS: 73.40.Qv, 85.30.Tv, 85.30.De, 73.40.Gk, 73.20.-r Additional Information Full Text: [ HTML Sectioned HTML PDF (32 kB) GZipped PS ] Order References Citation links [e.g., Phys. Rev. D 40, 2172 (1989)] go to online journal abstracts. Other links (see Reference Information) are available with your current login. Navigation of links may be more efficient using a second browser window. F. Rana, S. Tiwari, and D. A. Buchanan, Appl. Phys. Lett. 69, 1104 (1996). P. J. Price, Am. J. Phys. 66, 1119 (1998). [SPIN] G. Gamow, Z. Phys. 51, 204 (1928);E. C. Kemble, Fundamental Principles of Quantum Mechanics (McGraw–Hill, New York, 1937), Sec. 31f;A. Bohm, M. Gadella, and G. B. Mainland, Am. J. Phys. 57, 1103 (1989). [SPIN] M. Büttiker, Phys. Rev. B 27, 6178 (1983).

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