Electronic memory effects in self-assembled monolayer systems

  • Chen J
  • Su J
  • Wang W
 et al. 
  • 13


    Mendeley users who have this article in their library.
  • 33


    Citations of this article.


We report stable and reproducible switching and memory effects in Self-Assembled Monolayers (SAMs). We demonstrate realization of negative differential resistance (NDR) and charge storage in electronic devices that utilize single redox-center-contained SAM as the active component; and compare the effects of various redox centers to switching and storage behavior. The devices exhibit electronically programmable and erasable memory bits with bit retention times greater than 15 min at room temperature. © 2002 Elsevier Science B.V. All rights reserved.

Author-supplied keywords

  • Molecular transport
  • Self-assembled monolayer

Get free article suggestions today

Mendeley saves you time finding and organizing research

Sign up here
Already have an account ?Sign in

Find this document


  • J. Chen

  • J. Su

  • W. Wang

  • M. A. Reed

Cite this document

Choose a citation style from the tabs below

Save time finding and organizing research with Mendeley

Sign up for free