Electronic structure of oxygen deficient amorphous oxide semiconductor a-InGaZnO4-x: Optical analyses and first-principle calculations

  • Kamiya T
  • Nomura K
  • Hirano M
 et al. 
  • 2


    Mendeley users who have this article in their library.
  • N/A


    Citations of this article.


Defect states in a representative amorphous oxide semiconductor, a-InGaZnO4, were studied by optical analyses and first-principle calculations. The optical analyses suggested that the as-deposited a-IGZO film have weak subgap absorptions around 0.6 and 2 eV. Local density approximation calculations showed that an oxygen defect works as an electron trap as well as a shallow donor depending on its local structure. It suggests that a large vacancy space remained in an oxygen deficient structure forms a deep levels in the band gap and traps electrons, while if such a large space is annihilated e.g. by a film growth process and post thermal annealing, oxygen deficiency may form a shallow donor level. (© 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

Get free article suggestions today

Mendeley saves you time finding and organizing research

Sign up here
Already have an account ?Sign in


  • Toshio Kamiya

  • Kenji Nomura

  • Masahiro Hirano

  • Hideo Hosono

Cite this document

Choose a citation style from the tabs below

Save time finding and organizing research with Mendeley

Sign up for free