Energy band gap and conductivity measurement of CdSe thin films

  • Patidar D
  • Rathore K
  • Saxena N
 et al. 
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Abstract

Thin film of CdSe has been deposited onto clean glass substrate by using vacuum evaporation technique. This thin film is characterized through the XRD, which indicates that film is polycrystalline in nature and having preferred orientation along (002) plane in c-direction. Absorption spectra of this thin film has been recorded using spectrophotometer. The energy band gap has been determined using these spectra. It is found that energy band gap of CdSe film is 1.67 eV. The conductivity of this thin film has been determined by I-V measurement using the electrometer. It is observed that the conductivity increases with the increase of temperature. This is due to the increase of grain size and removal of defects, which are present in the film. Activation energy of this film is also determined.

Author-supplied keywords

  • Activation energy
  • Conductivity
  • Energy band gap
  • Thin film

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Authors

  • D. Patidar

  • K.S. Rathore

  • N.S. Saxena

  • K. Sharma

  • T.P. Sharma

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