Energy-delay performance of giant spin Hall effect switching for dense magnetic memory

  • Manipatruni S
  • Nikonov D
  • Young I
  • 26


    Mendeley users who have this article in their library.
  • 29


    Citations of this article.


In this letter, we show that Giant Spin Hall Effect (GSHE) MRAM can enable better energy- delay and voltage performance than traditional MTJ based spin torque devices at scaled nanomagnet dimensions (10-30 nm). Firstly, we derive the effect of dimensional scaling on spin injection efficiency, voltage-delay and energy-delay of spin torque switching using MTJs and GSHE and identify the optimum electrode geometry for low operating voltage (10 GHz) operation. We show that effective spin injection efficiency >100 % can be obtained using optimum spin hall electrode thickness for 30 nm nanomagnet widths. Finally, we derive the energy-delay trajectory of GSHE and MTJ devices to calculate the energy-delay product of GSHE and MTJ devices with an energy minimum at the characteristic time of the magnets. Optimized GSHE devices when combined with PMA can enable MRAM with scaled nanomagnets (30 nm X 60 nm), ultra-low voltage operation (< 0.1 V), fast switching times (10 ps) and switching energy as low as 100 aJ/bit.

Get free article suggestions today

Mendeley saves you time finding and organizing research

Sign up here
Already have an account ?Sign in

Find this document

Get full text


  • Sasikanth Manipatruni

  • Dmitri E. Nikonov

  • Ian A. Young

Cite this document

Choose a citation style from the tabs below

Save time finding and organizing research with Mendeley

Sign up for free