Epitaxial Lateral Overgrowth of GaN

  • Beaumont B
  • Vennéguès P
  • Gibart P
  • 44


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Since there is no GaN bulk single crystal available, the whole technological development of GaN based devices relies on heteroepitaxy. Numerous defects are generated in the heteroepitaxy of GaN on sapphire or 6H-SiC, mainly threading dislocations (TDs). Three types of TDs are currently ob- served, a type (with Burgers vector 1/3; c type (with ) and mixed a+c (1/3). The Epitaxial Lateral Overgrowth (ELO) technology produces high quality GaN with TD densities in the mid 10^6 cm–2, linewidth of the low-temperature photoluminescence (PL) near-bandgap recombination peaks

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  • B. Beaumont

  • Philippe Vennéguès

  • Pierre Gibart

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