Exciton diffusion lengths of organic semiconductor thin films measured by spectrally resolved photoluminescence quenching Effects of optical interference and energy transfer on exciton diffusion length measurements in organic Exciton diffusion lengths of

  • Lunt R
  • Giebink N
  • Belak A
  • et al.
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Abstract

We demonstrate spectrally resolved photoluminescence quenching as a means to determine the exciton diffusion length of several archetype organic semiconductors used in thin film devices. We show that aggregation and crystal orientation influence the anisotropy of the diffusion length for vacuum-deposited polycrystalline films. The measurement of the singlet diffusion lengths is found to be in agreement with diffusion by Förster transfer, whereas triplet diffusion occurs primarily via Dexter transfer.

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Lunt, R. R., Giebink, N. C., Belak, A. A., Benziger, J. B., & Forrest, S. R. (2009). Exciton diffusion lengths of organic semiconductor thin films measured by spectrally resolved photoluminescence quenching Effects of optical interference and energy transfer on exciton diffusion length measurements in organic Exciton diffusion lengths of. Journal of Applied Physics Journal of Applied Physics Journal of Applied Physics Journal of Applied Physics Semiconductors Journal of Applied Physics Journal of Applied Physics Journal of Applied Physics, 105(10). Retrieved from http://dx.doi.org/10.1063/1.3079797 http://aip.scitation.org/toc/jap/105/5

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