Optical time-of-flight (TOF) technique was used to measure the electron mobility of tris(8-hydroxyquinoline) aluminum (Alq3) exposed to different gases. When freshly prepared Alq3 sample was exposed to air, the TOF signal was observed to be highly dispersive. After annealing the sample to 370 K for 12 h, the signal became non-dispersive. The field dependence of the electron mobility was found to exhibit Poole-Frenkel form between 250-380 K. The effects of various ambient gases (N2, O2, H2O) to the electron mobility were examined. It is found that O2 acts as an extrinsic dopant and induces electron traps in bulk Alq3.
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