We report on the fabrication of UV light-emitting diodes (LEDs) based on a p-n junction n-ZnMgO/n-ZnO/p-AlGaN/p-GaN semiconductor triple-heterostructure. Radio-frequency plasma-assisted molecular beam epitaxy was used to grow the complete heterostructure on p-AlGaN/p-GaN c-plane sapphire templates. Cross-sectional transmission electron microscopy showed single-crystal quality of the pseudomorphically grown ZnO active region of the device. The LEDs were fabricated by a process involving both wet and dry etching. Electroluminescence emission most likely associated with ZnO excitonic transition was observed up to 370°C. The results show the potential of ZnO-based materials for UV emitters of potentially lower cost and with comparable or higher emission intensity than comparable AlGaN/GaN devices. © 2005 The Japan Society of Applied Physics.
CITATION STYLE
Yang, H. S., Han, S. Y., Heo, Y. W., Baik, K. H., Norton, D. P., Pearton, S. J., … Chi, G. C. (2005). Fabrication of hybrid n-ZnMgO/n-ZnO/p-AlGaN/p-GaN light-emitting diodes. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 44(10), 7296–7300. https://doi.org/10.1143/JJAP.44.7296
Mendeley helps you to discover research relevant for your work.