We have fabricated Nb nanogap electrodes using a combination of molecular lithography and electron beam lithography. Au nano-particles with anchor molecules were placed in the gap, the width of which could be controlled on a molecular scale (∼2nm). Three different anchor molecules which connect the Au nano-particles and the electrodes were tested to investigate their contact resistance, and a local gate was fabricated underneath the Au nano-particles. The electrical transport measurements at liquid helium temperatures indicated single electron transistor (SET) characteristics with a charging energy of about ∼ 5meV, and a clear indication of the effect of superconducting electrodes was not observed, possibly due to the large tunnel resistance. © 2010 IOP Publishing Ltd.
CITATION STYLE
Nishino, T., Negishi, R., Kawao, M., Nagata, T., Ozawa, H., & Ishibashi, K. (2010). The fabrication and single electron transport of Au nano-particles placed between Nb nanogap electrodes. Nanotechnology, 21(22). https://doi.org/10.1088/0957-4484/21/22/225301
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