Femtosecond Extreme Ultraviolet Photoemission Spectroscopy: Observation of Ultrafast Charge Transfer at the n-TiO <sub>2</sub> /p-Si(100) Interface with Controlled TiO <sub>2</sub> Oxygen Vacancies

  • Vaida M
  • Leone S
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Wide band gap heterostructures can be accurately fabricated at room temperature to exhibit remarkable electrical properties that facilitate the transfer of electrons across the heterojunction while blocking the transfer of holes. The present investigation focuses on engineering the electronic structure of a TiO2 overlayer on a p-type doped Si(100) substrate by controlling the concentration of TiO2 oxygen vacancies. TiO2 films are deposited on p-Si(100) in an ultrahigh vacuum setup by evaporation of Ti atoms at a constant rate in a variable O2 atmosphere. The concentration of oxygen vacancies and consequently the degree of n-type doping of TiO2 is tuned by controlling the oxygen background pressure during the TiO2 formation. To investigate the electronic structure and the concentration of defects in the TiO2 layer as well as to characterize the TiO2/p-Si(100) band alignment we used photoelectron spectroscopy employing femtosecond extreme ultraviolet laser pulses produced via high harmonic generation. Furth...

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  • Mihai E. Vaida

  • Stephen R. Leone

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