A ferroelectric oxide made directly on silicon

  • Warusawithana M
  • Cen C
  • Sleasman C
 et al. 
  • 208

    Readers

    Mendeley users who have this article in their library.
  • 247

    Citations

    Citations of this article.

Abstract

Metal oxide semiconductor field-effect transistors, formed using silicon dioxide and silicon, have undergone four decades of staggering technological advancement. With fundamental limits to this technology close at hand, alternatives to silicon dioxide are being pursued to enable new functionality and device architectures. We achieved ferroelectric functionality in intimate contact with silicon by growing coherently strained strontium titanate (SrTiO3) films via oxide molecular beam epitaxy in direct contact with silicon, with no interfacial silicon dioxide. We observed ferroelectricity in these ultrathin SrTiO3 layers by means of piezoresponse force microscopy. Stable ferroelectric nanodomains created in SrTiO3 were observed at temperatures as high as 400 kelvin.

Get free article suggestions today

Mendeley saves you time finding and organizing research

Sign up here
Already have an account ?Sign in

Find this document

Authors

  • Maitri P. Warusawithana

  • Cheng Cen

  • Charles R. Sleasman

  • Joseph C. Woicik

  • Yulan Li

  • Lena Fitting Kourkoutis

Cite this document

Choose a citation style from the tabs below

Save time finding and organizing research with Mendeley

Sign up for free