Formation and modification of Schottky barriers at the PZT/Pt interface

  • Chen F
  • Schafranek R
  • Wu W
 et al. 
  • 19

    Readers

    Mendeley users who have this article in their library.
  • 24

    Citations

    Citations of this article.

Abstract

A determination of the Schottky barrier height at the interface between ferroelectric Pb(Zr,Ti)O 3
thin films and Pt by photoelectron spectroscopy is presented. Stepwise Pt deposition was performed
in situ onto a contamination-free Pb(Zr,Ti)O 3 thin film surface. The substrate surface is reduced
in the course of Pt deposition as evident from the observation of metallic Pb. The Fermi level is
found at E F ? E VB = 1.6 ? 0.1?eV above the valence band maximum of the as-prepared interface.
Annealing of the sample in an oxygen pressure of 0.1 and 1?Pa strongly reduces the amount of
metallic Pb and leads to a reduction in the Fermi level position at the interface to E F ? E VB =
1.1 ? 0.1?eV. Storage in vacuum at room temperature strongly reduces the interface leading to a
significantly higher Fermi level position ( E F ? E VB = 2.2 ? 0.1?eV). The reduction is attributed
to the presence of hydrogen in the residual gas. The change in barrier height might be a severe
issue for stable device operation with Pt contacts even at ambient temperatures.

Get free article suggestions today

Mendeley saves you time finding and organizing research

Sign up here
Already have an account ?Sign in

Find this document

Get full text

Authors

  • Feng Chen

  • Robert Schafranek

  • Wenbin Wu

  • Andreas Klein

Cite this document

Choose a citation style from the tabs below

Save time finding and organizing research with Mendeley

Sign up for free