A study has been made of the formation by plasma anodization of alumina layers on n- and p-type In0.53Ga0.47As. Layers of good electrical quality were formed on n-type material but in the case of p-type material the aluminum layer couldnot be completely oxidized. A model to explain this has been proposed. The anodic conditions which were required to justanodize an aluminum layer on n-type material have been established and Auger depth profiling was used to assess theabruptness of the alumina-semiconductor interface at this condition as well as at higher current densities. Comparisonwith previous work on InP and GaAs suggests that the In0.53Ga0.47As-alumina interface is structurally more stable and lessprone to broadening by over-anodization. The formation of alumina layers was not disturbed by the presence of previously patterned metal ohmic contacts nor was the good electrical quality of the alumina insulating layers impaired.
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