Frequency-dependent complex conductivities and dielectric responses of indium tin oxide thin films from the visible to the far-infrared

  • Chen C
  • Lin Y
  • Chang C
 et al. 
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Abstract

Transparent and conducting indium tin oxide (ITO) thin films form an integral part for various optoelectronic devices. In this paper, we report the frequency-dependent complex conductivities and dielectric responses of several sputtered ITO thin films with thicknesses in the range of 189-962 nm by using terahertz time domain spectroscopy (THz-TDS), optical reflectance spectroscopy, and electrical measurements. The plasma frequencies are verified to be from 1590 to 1930 rad·THz, while the scattering times are in the range 6-7 fs based on the Drude free-electron model. The mobilities of the above ITO thin films are calculated to be 32.7-34.2 cm2 V-1 s-1, whereas the carrier concentrations lie in the range 2.79-4.10× 1020 cm-3. The electrical properties derived from the THz-TDS technique agree well with those determined by Hall measurement. Parameters for the complex dielectric function suitable for ITO in the range 0.2-2 and 4-450 THz are also determined.

Author-supplied keywords

  • Dielectric function
  • drude free-electron model
  • indium tin oxide
  • optical constants
  • plasma frequency
  • scattering time
  • terahertz time domain spectroscopy

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Authors

  • Ching Wei Chen

  • Yen Cheng Lin

  • Chia Hua Chang

  • Peichen Yu

  • Jia Min Shieh

  • Ci Ling Pan

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