GaN nanowire light emitting diodes based on templated and scalable nanowire growth process

  • Hersee S
  • Fairchild M
  • Rishinaramangalam A
 et al. 
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Abstract

GaN optoelectronic devices based on nanowires offer potential advantages that merit further investigation for applications in solid-state lighting and displays. Reported is the operation GaN nanowire, light-emitting diodes that are based on a uniform and scalable nanowire process. For light-emitting diodes consisting of approximately 300 nanowire pn homojunctions, operating in parallel, the electroluminescence intensity was found to grow superlinearly with current. For individual nanowire light-emitting diodes the forward and reverse leakage current was < 1 pA. The low leakage current of individual light-emitting nanowire diodes indicates that surface effects do not dominate the electrical behaviour of these LEDs.

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Authors

  • S D Hersee

  • M Fairchild

  • A K Rishinaramangalam

  • M S Ferdous

  • L Zhang

  • P M Varangis

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