GaN nanowire light emitting diodes based on templated and scalable nanowire growth process

  • Hersee S
  • Fairchild M
  • Rishinaramangalam A
 et al. 
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GaN optoelectronic devices based on nanowires offer potential advantages that merit further investigation for applications in solid-state lighting and displays. Reported is the operation GaN nanowire, light-emitting diodes that are based on a uniform and scalable nanowire process. For light-emitting diodes consisting of approximately 300 nanowire pn homojunctions, operating in parallel, the electroluminescence intensity was found to grow superlinearly with current. For individual nanowire light-emitting diodes the forward and reverse leakage current was

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  • S.D. Hersee

  • M. Fairchild

  • A.K. Rishinaramangalam

  • M.S. Ferdous

  • L. Zhang

  • P.M. Varangis

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