Single-phase vanadium dioxide (VO2) thin films have been grown on Si3N4/Si substrates by means of a well-controlled magnetron sputtering process. The deposited VO2 films were found to exhibit a semiconductor-to-metal transition (SMT) at ∼ 69 °C with a resistivity change as high as 3.2 decades. A direct and clear-cut correlation is established between the SMT characteristics (both amplitude and abruptness of the transition) of the VO2 films and their crystallite size.
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