H2S concentration dependence of properties of Cu 2ZnSnS4 thin film prepared under nonvacuum condition

  • Maeda K
  • Tanaka K
  • Nakano Y
 et al. 
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Abstract

Cu2ZnSnS4 (CZTS) thin films were prepd. by a sol-gel sulfurization method. Sulfurization was carried out in H2S of various concns. and the properties of the films were investigated. The CZTS thin films sulfurized at 500 DegC for 1 h in 0.5 and 3% H2S atmospheres had large grains compared with the film sulfurized in 1% H2S atm. From the X-ray diffraction anal., the CZTS thin film sulfurized for 1 h in 0.5% H2S atm. included a small amt. of CuxS as a secondary phase. The films sulfurized for 1 h in 1 and 3% H2S atmospheres were composed of a CZTS phase without CuxS. Owing to the long sulfurization process, the CuxS phase was eliminated and the optical properties of the films were improved. The size of the grains sulfurized in 1% H2S increased with increasing sulfurization time from 2 to 3 h.

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