High mobility in a stable transparent perovskite oxide

  • Kim H
  • Kim U
  • Kim H
 et al. 
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Abstract

We discovered that La-doped BaSnO3 with the perovskite structure has an unprecedentedly high mobility at room temperature while retaining its optical transparency. In single crystals, the mobility reached 320 cm2 V-1 s-1 at a doping level of 8×1019 cm-3, constituting the highest value among wide-band-gap semiconductors. In epitaxial films, the maximum mobility was 70 cm2 V-1 s-1 at a doping level of 4.4×1020 cm-3. We also show that resistance of (Ba,La)SnO3 changes little even after a thermal cycle to 530 °C in air, pointing to an unusual stability of oxygen atoms and great potential for realizing transparent high-frequency, high-power functional devices. {©}2012 The Japan Society of Applied Physics

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Authors

  • Hyung Joon Kim

  • Useong Kim

  • Hoon Min Kim

  • Tai Hoon Kim

  • Hyo Sik Mun

  • Byung Gu Jeon

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