High-efficiency thin-film silicon solar cells with improved light-soaking stability

  • Matsui T
  • Sai H
  • Saito K
 et al. 
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Abstract

Hydrogenated amorphous silicon (a-Si:H) films are prepared by
plasma-enhanced chemical vapor deposition (PECVD) with a triode
electrode configuration in which a SiH4-H-2 glow-discharge plasma is
confined spatially away from the substrate. Although the deposition rate
(0.1-0.5 angstrom/s) is lower than that of the conventional diode PECVD
process (2.5 angstrom/s), the light-induced degradation in conversion
efficiency (triangle eta/eta(ini)) of a single-junction solar cell is
substantially reduced (e.g., triangle eta/eta(ini) similar to 10% at an
absorber thickness of t(i)=250nm), and efficiencies after light soaking
(LS) maintain >9% for t(i)=180-390nm. By applying the improved a-Si:H
layers as top cell absorbers in a-Si:H/hydrogenated microcrystalline
silicon (mu c-Si:H) tandem solar cells, the light-induced degradation
can be reduced further (e.g., triangle eta/eta(ini) similar to 5% at
t(i)=250nm). As a result, we obtain confirmed stabilized efficiencies of
9.6% (LS condition: 100mW/cm(2), 50 degrees C, 1000h) and 11.9% (LS
condition: 125mW/cm(2), 48 degrees C, 310h) for a-Si:H single-junction
and a-Si:H/mu c-Si:H tandem solar cells, respectively. Copyright (c)
2012 John Wiley & Sons, Ltd.

Author-supplied keywords

  • hydrogenated amorphous silicon; plasma-enhanced ch

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Authors

  • Takuya Matsui

  • Hitoshi Sai

  • Kimihiko Saito

  • Michio Kondo

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