A systematic study of electronic transport properties was carried out for ZnO thin films grown on high-temperature annealed buffer layers of semi-insulating Mg0.15Zn0.85O. As functions of growth temperature and oxygen pressure during laser molecular-beam epitaxy growth, there can be seen optimum growth conditions where gross concentration of intrinsic defects is thought to be reduced. For the best qualified film, Hall mobilities of 5000 cm2 Vââ��â�œ1 sââ��â�œ1 at 100 K and 440 cm2 Vââ��â�œ1 sââ��â�œ1 at 300 K were recorded with the residual electron densities of 4Ãâ��1014 and 9Ãâ��1015 cmââ��â�œ3, respectively.
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