We experimentally demonstrate on-chip active photonicdevices fabricated from deposited polycrystallinesilicon, which can be used for monolithic three-dimensional integration of optical networks. The demonstrated modulator is based on all-optical carrier injection in a micrometer-size resonator and has a modulation depth of 10 dB and a temporal response of 135 ps . Grain boundaries in the polycrystallinesilicon (polysilicon) material result in faster electron-hole recombination, enabling a shortened carrier lifetime and a faster optical switching time compared to similar devices based on crystalline silicon.
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