High-speed operation of vertical type organic transistors utilizing step-edge structures

  • Takano T
  • Yamauchi H
  • Iizuka M
 et al. 
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Abstract

An organic transistor having a novel structure, step-edge vertical-channel organic field-effect transistor (SVC-OFET), with a short channel length has been fabricated by a low-cost self-alignment process. The short channel is formed in the vertical direction along the side wall of a step-edge structure. The SVC-OFET structure also has an advantage in reducing the parasitic capacitance between the gate and drain electrodes. A short channel and reduced capacitance are important properties for a high-speed operation. The cutoff frequency achieved was approximately 900 kHz, which is a very high value for organic transistors. (C) 2009 The Japan Society of Applied Physics

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Authors

  • Tomoki Takano

  • Hiroshi Yamauchi

  • Masaaki Iizuka

  • Masakazu Nakamura

  • Kazuhiro Kudo

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